RSD175N10 is a N-channel MOSFET product from ROHM Co., Ltd. It features low on-resistance, 4V drive, and high power package.
The ROHM RSD175N10 is a 4 V‑drive N‑channel MOSFET presented in a high‑power package. The datasheet provides detailed electrical characteristics, absolute maximum ratings, thermal resistance, and typical application circuits.
Key sections include features, packaging specifications, absolute maximum ratings, thermal data, and measurement circuit diagrams, helping designers integrate the device safely into electronic equipment.
| Drain‑source voltage (VDS) | 100 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (ID) | 7.5 A |
| Pulsed drain current (ID,pulse) | 38.5 A |
| Source current (IS) | 17.5 A |
| Power dissipation (PD) | 20 W |
| Maximum channel temperature (TCH) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance, junction‑to‑case (RθJC) | 6.25 °C/W |
| Total gate charge (Qg) | 24 nC |
The device is rated for a maximum drain‑source voltage of 100 V.
The maximum gate‑source voltage is +20 V.
The continuous drain current rating is 7.5 A.
The MOSFET can dissipate up to 20 W.