The RW1A020ZP is a low on-resistance, high power package, low voltage drive (1.5V) silicon P-channel MOSFET from ROHM. It is suitable for inner circuit switching applications.
The RW1A020ZP is a silicon P‑channel MOSFET designed for low‑on‑resistance operation with a 1.5 V gate drive. It offers a high‑power package and is suitable for switching applications in audio‑visual, office‑automation, communication and other electronic equipment.
The datasheet provides absolute maximum ratings, thermal characteristics, and detailed electrical parameters such as drain‑source voltage, gate‑source voltage, continuous and pulsed drain currents, and capacitances. Packaging information and recommended design notes, including ESD protection, are also included.
| Drain‑source voltage (Vdss) | -12 V |
|---|---|
| Gate‑source voltage (Vgss) | +10 V |
| Continuous drain current (Id) | +2 A |
| Pulsed drain current (Idp) | +6 A |
| Total power dissipation (Pmax) | 0.7 W |
| Maximum junction temperature (Tj) | 150 °C |
| Thermal resistance, junction‑to‑ambient (RθJA) | 179 °C/W |
| Input capacitance (Ciss) | 770 pF |
| Output capacitance (Coss) | 75 pF |
The device can tolerate a drain‑source voltage of up to -12 V.
The storage temperature range is -55 °C to +150 °C.
A low gate drive of 1.5 V is sufficient for operation.
The typical on‑state resistance is about 105 mΩ at Id = 1 A.