1.5V Drive Pch MOSFET RW1A025AP is a low voltage drive p-channel mosfet produced by rohm company, with the characteristics of low on-resistance, small size and low voltage drive
The RW1A025AP is a 1.5 V drive P‑channel MOSFET offered by ROHM. The datasheet details its structure, packaging, and typical application circuits for switching and low‑voltage drive uses.
Key specifications include a maximum drain‑source voltage of –12 V, a continuous drain current of 42.5 A, low on‑resistance, and a power dissipation limit of 0.7 W. Thermal resistance, body‑diode behavior, and dynamic switching characteristics are also provided, along with measurement circuit diagrams and legal notices.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | 0 to -8 V |
| Continuous drain current (ID) | 42.5 A |
| Power dissipation (PD) | 0.7 W |
| Thermal resistance (RθJA) | 179 °C·W |
| On‑state resistance (RDS(on)) typical | 55 mΩ |
The device can tolerate a drain‑source voltage up to –12 V.
It is a low‑voltage drive MOSFET designed for 1.5 V gate drive.
The part is supplied in a T2CR package.