RW1A030AP is a low voltage drive P-channel MOSFET device produced by ROHM. It is suitable for switching applications. The main features include low on-resistance, small high power package, and low voltage drive.
The RW1A030AP is a 1.5 V drive P‑channel MOSFET designed for low on‑resistance and compact high‑power applications. Key features include low on‑resistance, a small high‑power package, and a low‑voltage drive capability.
Typical applications cover audio‑visual equipment, office‑automation devices, communication gear, electronic appliances and amusement devices. The device is supplied in a T2CR package with a basic ordering unit of 8 000 pieces and includes an internal body diode for protection.
| Drain‑source voltage (VDS) | -12 V |
|---|---|
| Gate‑source voltage (VGS) | 0 to -8 V |
| Continuous drain current (ID) | +3 A |
| Storage temperature range | -55 °C to +150 °C |
The device can tolerate a drain‑source voltage of up to -12 V.
It is a 1.5 V drive P‑channel MOSFET.
The MOSFET is supplied in a T2CR package.