This datasheet is about ROHM's RW1C015UN Nch MOSFET. This MOSFET has low-voltage drive characteristics, with a rated maximum voltage of 20V, a maximum current of 1.5A, and a maximum power dissipation of 3W.
The RW1C015UN is a silicon N‑channel MOSFET designed for low‑voltage drive (1.5 V) applications. It features a low on‑resistance and a high‑power package suitable for switching circuits.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal resistance data, and typical output curves. It also includes measurement circuit diagrams and a notice on usage and export restrictions.
| Drain‑source voltage (VDS) max | 20 V |
|---|---|
| Gate‑source voltage (VGS) max | 10 V |
| Continuous drain current (ID) typ | 1.56 A |
| Pulsed drain current (ID) max | 3 A |
| Total power dissipation (PD) max | 0.7 W |
| On‑resistance (RDS(on)) typical | 240 mΩ |
| Gate charge (Qg) total | 18 nC |
| Input capacitance (Ciss) | 110 pF |
| Output capacitance (Coss) | 18 pF |
| Body diode forward voltage (VF) | 12 V |
The maximum drain‑source voltage is 20 V.
The gate‑threshold voltage ranges from 0.3 V to 1.0 V.
The typical on‑resistance is 240 mΩ.
The device can be stored from –55 °C to +150 °C.