RW1C020UN is a N-channel MOSFET produced by ROHM company. It features low on-resistance, built-in G-S protection diode, space saving, small surface mount package and low voltage drive.
The RW1C020UN is a 1.5 V drive N‑channel MOSFET offered by ROHM in a compact WEMT6 surface‑mount package. The datasheet provides key electrical parameters, absolute maximum ratings, and typical performance curves for designers.
Key features include low on‑resistance, an integrated gate‑source protection diode, and suitability for low‑voltage drive applications. Packaging details, thermal resistance, and measurement circuit diagrams are also included.
| Drain‑source voltage (VDS) max | 20 V |
|---|---|
| Gate‑source voltage (VGS) max | +10 V |
| Continuous drain current (ID) max | 2 A |
| Pulsed drain current (ID) max | 6 A |
| Total power dissipation (PD) max | 0.7 W |
| Channel‑to‑ambient thermal resistance (RθJA) | 179 °C/W |
| Gate threshold voltage (VGS(th)) | 0.3 – 1.0 V |
| Input capacitance (Ciss) typical | 180 pF |
| Output capacitance (Coss) typical | 45 pF |
| Reverse transfer capacitance (Crss) typical | 25 pF |
The MOSFET can withstand up to 20 V between drain and source.
The static on‑state resistance is typically between 95 mΩ and 135 mΩ.
Yes, it features a built‑in gate‑source protection diode.
It is designed for low‑voltage drive, typically 1.5 V.