RW1C025ZP is a low voltage drive, small high power MOSFET from ROHM.
The RW1C025ZP is a 1.5 V drive P‑channel MOSFET offered by ROHM. It features low on‑resistance, a compact high‑power package, and can be driven at low voltage (1.5 V). The device is intended for switching applications and includes an internal body diode.
The datasheet provides comprehensive electrical characteristics, absolute maximum ratings, thermal resistance data, and typical characteristic curves. It also includes recommended packaging (T2CR tape) and measurement circuit diagrams for switching time and gate charge.
| Drain‑source voltage (VDS) | -20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 42.5 A |
| Pulsed drain current (ID(p)) | 10 A |
| Thermal resistance (RθJA) | 179 °C/W |
| Gate threshold voltage (VGS(th)) | -0.3 V (typ) |
The device can tolerate a drain‑source voltage of up to –20 V.
The typical gate threshold voltage is –0.3 V.
The MOSFET can conduct a continuous drain current of 42.5 A.