RW1E015RP is a 4V drive Pch MOSFET produced by ROHM company. It features low on-resistance, space saving, high power package, low voltage drive, etc. It is mainly used in switching power supplies and other fields.
The RW1E015RP is a silicon P‑channel MOSFET offered by ROHM in a space‑saving, high‑power package. It features low on‑resistance, low‑voltage (4 V) drive capability, and built‑in ESD protection.
The datasheet provides absolute maximum ratings, detailed electrical parameters, typical characteristic curves, and packaging specifications. It also includes safety notices and usage guidelines for designers.
| Drain‑source voltage (V_DSS) | -30 V |
|---|---|
| Gate‑source voltage (V_GSS) | +20 V |
| Continuous drain current (I_D) | 156 A |
| Pulsed drain current (I_D(p)) | +6 A |
| Continuous source current (I_S) | 0.5 A |
| Total power dissipation (P_D) | 0.7 W |
| Maximum junction temperature (T_J) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Thermal resistance (RθJA) | 179 °C/W |
| Package type | T2R I |
| Typical gate charge (Q_g) | 3.2 nC |
The maximum drain‑source voltage is -30 V.
The device can be stored from -55 °C up to +150 °C.
The typical total gate charge is 3.2 nC at -15 V.
It uses the T2R I package.