RW1E025RP is a P-channel MOSFET with low on-resistance, small high power package, and low drive voltage (4V). It is suitable for switching applications.
The RW1E025RP is a 4 V drive P‑channel MOSFET offered by ROHM. This datasheet provides detailed specifications such as maximum voltage, current ratings, on‑state resistance, and thermal characteristics, along with typical application circuits and measurement methods.
Key sections cover features, absolute maximum ratings, electrical characteristics, body‑diode data, characteristic curves, and measurement circuit diagrams, followed by legal notices and usage guidelines.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate threshold voltage (VGS(th)) typical | -1.0 V |
| Continuous drain current (ID) max | 42.5 A |
| Power dissipation (PD) max | 0.7 W |
| Thermal resistance (RθJA) | 179 °C/W |
The device can withstand up to 30 V between drain and source.
The typical gate threshold voltage is –1.0 V.
It is rated for a continuous drain current of 42.5 A.