The 2SA1225 is a silicon PNP epitaxial power transistor designed for high‑frequency applications such as power amplifiers and driver stages. It is complementary to the 28C2983 device and is intended for use in circuits requiring high transition frequency and robust voltage handling.
The document lists maximum ratings (e.g., 160 V collector‑base and collector‑emitter voltages, 15 A collector current) and detailed electrical characteristics including current gain, saturation voltages, and safe operating area curves. These specifications help designers ensure reliable operation within the specified temperature and power limits.
| Collector‑Base Voltage (Vcbo) | 160 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 160 V |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 15 A |
| Base Current (Ip) | 0.3 A |
| Collector Power Dissipation | 1.0 W (continuous), 15 W (pulsed) |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Transition Frequency (ft) | 100 MHz (typical) |
The maximum collector‑emitter voltage is 160 V.
The typical transition frequency is 100 MHz.
The device can be stored from –55 °C up to 150 °C.
The transistor is rated for a maximum collector current of 15 A.