The Toshiba 2SA1012 is a high‑current PNP silicon epitaxial transistor intended for switching and industrial applications. The datasheet provides detailed electrical parameters, maximum ratings, and thermal limits.
Key sections include Maximum Ratings, Electrical Characteristics, and Safe Operating Area curves, allowing designers to verify that the device meets required performance under specified conditions.
| Collector‑Base Voltage (Vcbo) | 60 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 50 V |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 5 A |
| Power Dissipation (Pp) | 25 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The maximum collector current is 5 A.
The device can dissipate up to 25 W.