Hitachi 2SK1155/2SK1156 Silicon N-Channel MOSFET Datasheet

2SK1155, 2SK1156 are bipolar MOSFETs with low on-resistance, high switching speed, low drive current, suitable for switching regulator and DC-DC converter.


Hitachi 2SK1155/2SK1156 Silicon N-Channel MOSFET Datasheet - cover page
Brand
Hitachi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
9
File format
PDF
File size
46 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
F7C1CE91D5201CDC95E0F0FFAFCA3F68

About this manual

The 2SK1155 and 2SK1156 are silicon N‑channel MOSFETs designed for high‑speed power switching applications such as switching regulators and DC‑DC converters. They feature low on‑resistance, fast switching, low drive current and no secondary breakdown.

The devices are supplied in a TO‑220AB package and are rated for up to 450 V (2SK1155) or 500 V (2SK1156) drain‑to‑source voltage, 5 A continuous drain current, and 50 W power dissipation. Detailed electrical characteristics, thermal impedance data and typical output curves are provided for design reference.

What's inside

  • Application
  • Features
  • Outline
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Channel Dissipation
  • Typical Output Characteristics
  • Maximum Safe Operation Area
  • Static Drain to Source on State Resistance
  • Cautions
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