This document describes the features and characteristics of a high-speed power switching product, including low on-resistance, high-speed switching, and low drive current. The product can be used in motor drives, DC-DC converters, power switches, and solenoid drives.
The 2SK1095 is an N‑channel MOSFET designed for high‑speed power switching applications such as motor drives, DC‑DC converters, and solenoid drivers. It can be driven from a 5 V source and features low on‑resistance and low drive current requirements.
The document lists absolute maximum ratings, detailed electrical characteristics, and thermal derating curves, including drain current limits, voltage ratings, capacitances, and switching times. These data help designers ensure safe and reliable operation within the specified limits.
| Drain‑to‑source voltage (V_DSS) | 60 V |
|---|---|
| Gate‑to‑source voltage (V_GSS) | +20 V |
| Continuous drain current (I_D) | 25 A |
| Peak drain current (I_D pulse) | 100 A |
| Channel dissipation (P_ch) | 30 W |
| Input capacitance (C_iss) | 1400 pF |
| Output capacitance (C_oss) | 720 pF |
| Reverse transfer capacitance (C_rss) | 220 pF |
| Turn‑on delay time (t_on) | 15 ns |
| Turn‑off delay time (t_off) | 270 ns |
The maximum drain‑to‑source voltage is 60 V.
The device can handle a continuous drain current of 25 A.