2SK1153, 2SK1154 are silicon N-channel MOS FETs suitable for high-speed power switching applications. They feature low on-resistance, high-speed switching, low drive current, and no secondary breakdown. They are suitable for switching regulators and DC-DC converters.
The 2SK1153 and 2SK1154 MOSFETs are designed for high‑speed power switching in applications such as switching regulators and DC‑DC converters. They feature low on‑resistance, low drive current, and no secondary breakdown, making them suitable for efficient power conversion.
The datasheet provides absolute maximum ratings, electrical characteristics, thermal derating curves, and typical performance graphs. Users should observe the specified voltage, current, and temperature limits and follow the cautions regarding product reliability and safety.
| Gate‑to‑source voltage (VGS) | 30 V |
|---|---|
| Drain current (ID) | 3 A |
| Input capacitance (Ciss) | 330 pF |
| Turn‑on delay time | 7 ns |
| Body‑to‑drain diode forward voltage | 0.9 V |
Pulse width should be less than 10 µs with a duty cycle under 1 %.