This document describes the features and characteristics of the 2SA838 transistor, which is suitable for high-frequency amplification and is complementary to the 2SC1359.
The 2SA838 is a silicon PNP epitaxial planar transistor designed for high‑frequency amplification. It is complementary to the 2SC1359 device.
Key specifications include a collector‑to‑base voltage of -30 V, collector‑to‑emitter voltage of -20 V, emitter‑to‑base voltage of -5 V, and a maximum collector current of -30 mA. The device offers a transition frequency (fT) of about 200 MHz, a noise figure of 4.0 dB, and a power dissipation rating of 250 mW.
| Collector to base voltage (Vcbo) | -30 V |
|---|---|
| Collector to emitter voltage (Vceo) | -20 V |
| Emitter to base voltage (Vebo) | -5 V |
| Collector current (Ic) | -30 mA |
| Power dissipation (Pc) | 250 mW |
The maximum collector‑to‑base voltage is -30 V.
The device can dissipate up to 250 mW.