2SA0777 is a silicon PNP type transistor manufactured by Mitsubishi Electric. It features high collector-emitter voltage (base open) VCEO and is optimized for the driver stage of a low-frequency and 25 W to 30 W output amplifier.
The 2SA0777 is a silicon PNP epitaxial planar transistor intended for low‑frequency driver amplification stages up to about 30 W. It is supplied in a TO‑92L‑A1 package and is suitable for standard electronic equipment such as office, communications, measuring and household devices.
The document lists absolute maximum ratings, electrical characteristics, and safe‑operation area curves, and includes legal notices regarding export controls and usage restrictions. Designers should observe the specified voltage, current, and temperature limits and verify the latest product specifications before finalizing a design.
| Collector‑base voltage (V_CBO) max | -80 V |
|---|---|
| Collector‑emitter voltage (V_CEO) max | -80 V |
| Collector current (I_C) max | 0.5 A |
| Junction temperature max | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
The maximum collector‑emitter voltage is –80 V.
The transistor can handle up to 0.5 A of collector current.
Yes, an export permit must be obtained from the Japanese authorities before exporting the product.