The IRF840 is a third‑generation HEXFET power MOSFET offered in a TO‑220 package, suitable for commercial‑industrial applications up to about 50 W. The device combines fast switching, low on‑resistance, and simple drive requirements.
The document lists absolute maximum ratings, thermal resistance values, and detailed electrical characteristics such as drain current limits, breakdown voltage, gate charge, and switching times, accompanied by typical output and transfer characteristic graphs.
| Power Dissipation (Pd) | 125 W |
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The device is rated for a maximum power dissipation of 125 W.