IRL1104S/L HEXFET® Power MOSFET is a high performance MOSFET device that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This device offers the designer an extremely efficient and reliable device for use in a wide variety of applications.
The IRL1104S/L is a logic‑level HEXFET power MOSFET offered in two package styles: a surface‑mount D2Pak (IRL1104S) and a low‑profile through‑hole version (IRL1104L). It provides a low on‑resistance and high current capability for efficient power switching applications.
The document lists absolute maximum ratings, detailed electrical characteristics, thermal parameters, package dimensions, and test circuit examples, along with contact information for International Rectifier worldwide.
| Pulsed Drain Current | 416 A |
|---|---|
| Power Dissipation @ 25°C | 2.4 W |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V |
| Junction‑to‑Case Thermal Resistance (Rjc) | 0.9 °C/W |
| Junction‑to‑Ambient Thermal Resistance (Rja) | 62 °C/W |
| Operating Temperature Range | -55 to +175 °C |
| Package Options | Surface‑mount D2Pak (IRL1104S) and low‑profile through‑hole (IRL1104L) |
It is offered in a surface‑mount D2Pak (IRL1104S) and a low‑profile through‑hole version (IRL1104L).
The device is rated for operation up to 175 °C.