The document introduces a HEXFET transistor called IRF054, which utilizes International Rectifier's advanced technology. The transistor features low on-state resistance, high transconductance, reverse energy, and diode recovery speed. It is suitable for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high-energy pulse circuits.
The IRF054 is a 60 V N‑channel HEXFET power MOSFET designed for switching power supplies, motor controls, inverters, choppers, audio amplifiers and high‑energy pulse circuits. It offers very low on‑state resistance, high transconductance, and robust avalanche and dv/dt ratings.
Key specifications include a typical RDS(on) of 0.022 Ω at VGS = 10 V, continuous drain current of 45 A (25 °C), pulsed drain current of 220 A, and a maximum power dissipation of 150 W. The device is supplied in a TO‑204AE (modified TO‑3) package with detailed thermal and electrical characteristics provided in the sheet.
| Drain‑to‑Source Breakdown Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (Id) @ 25 °C | 45 A |
| Pulsed Drain Current (IDM) | 220 A |
| Maximum Power Dissipation (PD) | 150 W |
| Typical On‑State Resistance (RDS(on)) | 0.022 Ω |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Total Gate Charge (Qg) | 80 – 180 nC |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.83 °C/W |
| Package | TO‑204AE (Modified TO‑3) |
The IRF054 can handle a continuous drain current of 45 A at a junction temperature of 25 °C.
The device is rated for a drain‑to‑source breakdown voltage of 60 V.
It is supplied in a TO‑204AE (modified TO‑3) package.
Typical RDS(on) is 0.022 Ω when VGS is 10 V.