IRG4CC40UB is a 600V IGBT with a 6-inch wafer package and a rated power of 10A.
This handbook provides the electrical characteristics and mechanical data for the IRG4CC40UB IGBT die in wafer form. It includes key parameters such as collector‑to‑emitter saturation voltage, breakdown voltage, gate threshold, and leakage current.
Additional information covers die dimensions, wafer size, recommended storage conditions, and die‑attach guidelines to ensure optimal performance in design applications.
| Collector-to-Emitter Saturation Voltage (VcE(on)) | 4.5 V max |
|---|---|
| Collector-to-Emitter Breakdown Voltage (Vce) | 600 V min |
| Gate Threshold Voltage (Vge) | 3.0 V min, 6.0 V max |
| Zero Gate Voltage Collector Current (Ices) | 300 A max |
| Gate-to-Emitter Leakage Current | 11 µA max |
| Die Dimensions | 0.170" x 0.232" |
| Wafer Diameter | 150 mm |
| Wafer Thickness | 0.015" ± 0.003" |
| Minimum Street Width | 100 µm |
| Ink Dot Size | 0.25 mm diameter minimum |
| Maximum Die‑Attach Temperature | 300 °C |
It is 4.5 V max under test conditions of Io = 10 A, Ty = 25 °C, Vee = 15 V.
Store it in its original container, in desiccated nitrogen with no contamination.
The die‑attach temperature should not exceed 300 °C for optimum electrical results.