EMG8/UMG8N is a dual NPN digital transistor launched by ROHM. It is packaged in EMT5/UMT5 and integrates two DTC143Z chips. Installation cost and area can be cut in half.
This ROHM datasheet describes the EMG8/UMG8N dual digital transistor, a built‑in resistor type NPN silicon device.
It includes packaging details, absolute maximum ratings, and key electrical parameters such as a 250 MHz transition frequency and 80 hFE gain.
| Supply voltage (Vce) | 50 V |
|---|---|
| Junction temperature (Tj) | 150 °C |
| Storage temperature (Tstg) | -55 to +150 °C |
| Transition frequency (fT) | 250 MHz |
| DC current gain (hFE) | 80 |
The maximum supply voltage (Vce) is 50 V.
The device has a transition frequency of 250 MHz.
The junction temperature rating is up to 150 °C.