This document introduces a 20V N-channel power MOSFET that uses Fairchild's high voltage PowerTrench process, optimized for power management applications. Its features include 2.5A, 20V with RDS(ON) of 50mΩ, low gate charge, fast switching speed, and extremely low RDS(ON).
The FDN371N is a 20 V N‑Channel PowerTrench MOSFET optimized for power‑management applications such as load switches. It features a low typical gate charge of 7.6 nC, fast switching speed, and the SuperSOT™3 package.
The datasheet provides absolute maximum ratings, thermal characteristics, and extensive electrical parameters, including drain‑source voltage, gate‑source voltage, continuous and pulsed drain currents, and on‑resistance variation with temperature. Package marking and ordering information are also listed.
| Drain-Source Voltage (V_DSS) | 20 V |
|---|---|
| Continuous Drain Current (I_D) | 25 A |
| Pulsed Drain Current (I_D(pulse)) | 10 A |
| Typical Gate Charge (Q_g) | 7.6 nC |
| Operating Temperature Range | -55 °C to +150 °C |
The maximum drain‑source voltage is 20 V.
The typical gate charge is 7.6 nC.
The device is rated for a continuous drain current of 25 A.
It can operate from –55 °C up to +150 °C.