This document describes the FDN5630 N-Channel MOSFET, which has low RDS(ON) and is suitable for high-frequency DC/DC converters. It features fast switching and higher overall efficiency.
The FDN5630 is a 60 V N‑Channel PowerTrench MOSFET designed to improve efficiency in DC/DC converters, offering low on‑resistance and fast switching in a compact SuperSOT‑3 package. It is optimized for high‑frequency operation and features low gate charge.
Key specifications include a drain‑source voltage rating of 60 V, continuous drain current of 1.7 A, typical on‑resistance of 0.127 Ω at VGS=10 V, total gate charge of about 10 nC, and an input capacitance of 400 pF. The device is supplied in tape‑and‑reel form for automated assembly.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | 1.7 A |
| On‑Resistance (RDS(on)) | 0.127 Ω (typical at VGS=10 V, ID=1.7 A) |
| Total Gate Charge (Qg) | ≈10 nC |
The FDN5630 is rated for a maximum drain‑source voltage of 60 V.
Typical on‑resistance is 0.127 Ω when VGS is 10 V and ID is 1.7 A.
It is supplied in the SuperSOT‑3 (3‑lead) tape‑and‑reel package.
The device can conduct a continuous drain current of 1.7 A.