This document describes the technical characteristics of the FDN5630 N-channel MOSFET, including low RDS(ON), optimized for high frequency DC/DC converters, low gate charge, and fast switching. This product is suitable for applications such as DC/DC converters and motor drives.
The FDN5630 N‑Channel MOSFET is designed to improve efficiency of DC/DC converters using synchronous or conventional PWM controllers. It features very low on‑resistance in a small SOT‑23 footprint and utilizes Fairchild’s PowerTrench technology for faster switching.
Key specifications include a 60 V drain‑source rating, 1.7 A continuous drain current, low Rds(on) (≈0.10 Ω at Vgs=10 V), and a total gate charge of about 10 nC. The device is supplied in SuperSOT‑3 tape‑and‑reel packaging, typically 3,000 units per reel, with detailed mechanical dimensions provided.
| Drain‑Source Voltage (Vds) | 60 V |
|---|---|
| Continuous Drain Current (Id) | 1.7 A |
| On‑Resistance (Rds(on)) | 0.10 Ω @ Vgs=10 V |
| Total Gate Charge (Qg) | 10 nC |
| Packaging – Tape & Reel Quantity | 3,000 units per reel |
The device is rated for a maximum drain‑source voltage of 60 V.
It can handle a continuous drain current of 1.7 A.
The on‑resistance is approximately 0.10 Ω at a gate‑source voltage of 10 V.
The standard SuperSOT‑3 tape‑and‑reel packaging contains 3,000 units per reel.