FND5618P is a 60V P-Channel MOSFET from Fairchild. The device features extremely low RDS(ON) and fast switching speed, making it suitable for DC-DC converters, load switches and power management applications.
The FDN5618P is a 60 V P‑Channel MOSFET built with Fairchild’s PowerTrench technology, optimized for power‑management applications such as DC‑DC converters and load switches. The document provides absolute maximum ratings, thermal characteristics, and detailed electrical parameters.
Packaging information includes SuperSOT‑3 tape‑and‑reel options, dimensions, and labeling guidelines. Trademark and product‑status sections clarify Fairchild’s rights and the preliminary nature of the data.
| Drain‑Source Voltage (VDS) | -60 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | -1.25 A |
| Pulsed Drain Current (ID, pulsed) | -10 A |
| Maximum Power Dissipation | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 250 °C/W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 75 °C/W |
| Package Marking / Reel Size | 7" reel, 3000 units |
The maximum continuous drain current is -1.25 A.
The MOSFET is rated for a drain‑source voltage of -60 V.
It is supplied in SuperSOT‑3 tape‑and‑reel format, typically 3000 devices per 7‑inch reel.
Junction‑to‑ambient thermal resistance is 250 °C/W and junction‑to‑case thermal resistance is 75 °C/W.