This document introduces a 60V P-Channel Logic Level PowerTrench MOSFET product, which uses Fairchild's high voltage PowerTrench process and is suitable for power management applications. Its features include: -1.25 A, -60 V drain-source resistance, fast switching speed, and extremely low drain-source resistance.
The Fairchild FDN5618P is a 60 V P‑Channel MOSFET built with PowerTrench technology, optimized for power‑management applications such as DC‑DC converters and load switches. The document provides a general description, typical applications, and key features like low on‑resistance and fast switching.
Detailed electrical characteristics, absolute maximum ratings, typical performance curves, and package dimensions for the SuperSOT‑3 form factor are presented. The datasheet also includes trademark information, disclaimer, and product status definitions.
| Drain‑Source Voltage (VDS) | -60 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (ID) | -1.25 A |
| Pulsed Drain Current (ID, pulsed) | -10 A |
| Maximum Power Dissipation | 0.5 W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 250 °C/W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 75 °C/W |
| Package Type | SuperSOT‑3 |
The maximum continuous drain current is -1.25 A.
The device is supplied in a SuperSOT‑3 package.
The rated drain‑source voltage is -60 V.
Junction‑to‑ambient resistance is 250 °C/W and junction‑to‑case resistance is 75 °C/W.