The FDP040N06 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor. This MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process, which has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The MOSFET features RDS(on) = 3.2mΩ (Typ.) @ VGS = 10V, ID = 75A, fast switching speed, low gate charge, high performance Trench Technology for Extremely Low RDS(on), high power and current handling capability, and RoHS compliance.
The FDPO40N06 is an N‑Channel PowerTrench® MOSFET manufactured by Fairchild Semiconductor. It is designed for high‑performance switching applications, offering low on‑state resistance and fast switching speed.
The document provides maximum voltage and current ratings, thermal characteristics, typical performance curves, and test circuit diagrams to aid designers in implementing the device in DC‑DC converters, synchronous rectifiers, and other power electronics.
| Drain‑to‑Source Voltage (VDS) | 60 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | +20 V |
| Continuous Drain Current (Id) @ 25 °C | 168 A |
| Pulsed Drain Current (Id) (Note 1) | 672 A |
| On‑Resistance (RDS(on)) typical @ VGS=10 V, ID=75 A | 3.2 mΩ |
| Input Capacitance (Ciss) | 6,190 pF |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.65 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
| Operating Temperature Range | -55 °C to +175 °C |
The device can handle a continuous drain current of 168 A (junction‑limited) at 25 °C.
It can sustain a pulsed drain current of up to 672 A (Note 1).
The typical on‑resistance is 3.2 mΩ.
Drain‑to‑Source voltage is rated at 60 V and Gate‑to‑Source voltage at +20 V.