This document describes the features and characteristics of the FDP047AN08A0 N-Channel UltraFET® Trench MOSFET, including its on-resistance, total charge, Miller charge, body diode charge, and UIS capability. The product is suitable for automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 24V and 48V systems.
The FDP047ANO8A0 is a 75 V, 80 A N‑Channel UltraFET® Trench MOSFET designed for automotive and power‑electronics applications. It offers low on‑resistance, low Miller charge, and high current capability, making it suitable for starter/alternator systems, electronic power steering, DC‑DC converters, and UPS designs.
The datasheet provides detailed electrical characteristics, typical performance curves, package information (TO‑220AB), and SPICE models for circuit simulation. Thermal resistance values, gate charge data, and safety notices are also included.
| Drain‑Source Voltage (VDS) | 75 V |
|---|---|
| Gate‑Source Voltage (VGS) | 420 V |
| Continuous Drain Current (ID) | 80 A |
| Power Dissipation (PD) | 310 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.48 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62 °C/W |
| Total Gate Charge (Qg) | 92 nC (typ) |
| Package | TO‑220AB tube |
The device can handle up to 80 A continuous drain current (Tg < 144 °C, VGS = 10 V).
It is supplied in a TO‑220AB tube package.
The typical total gate charge is 92 nC at VGS = 10 V.