FDP047AN08A0 is a N-Channel UltraFET® Trench MOSFET produced by Fairchild Semiconductor Corporation. Its features include rDS(ON) = 4.0mΩ (Typ.), Qg(tot) = 92nC (Typ.), Low Miller Charge, Low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), Qualified to AEC Q101, etc. This product is used in 42V Automotive Load Control, Starter / Alternator Systems, Electronic Power Steering Systems, Electronic Valve Train Systems, DC-DC converters and Off-line UPS, Distributed Power Architectures and VRMs, Primary Switch for 24V and 48V systems.
The FDP047ANO8A0 is a N‑Channel UltraFET trench MOSFET designed for automotive and power‑conversion applications. It offers a 75 V drain‑source rating, 80 A continuous drain current, low on‑resistance (typ 0.0088 Ω at Vgs=10 V) and a total gate charge of 92 nC.
Key features include low Miller charge, high current capability, and suitability for starter/alternator systems, electronic power steering, DC‑DC converters and off‑line UPS. The device complies with AEC‑Q101 automotive reliability standards and is packaged in a TO‑220AB case.
| Drain‑Source Voltage (VDS) | 75 V |
|---|---|
| Gate‑Source Voltage (VGS) | 420 V |
| Continuous Drain Current (ID) at 25 °C, VGS=10 V | 80 A |
| Pulsed Drain Current (ID) (max) | 400 A |
| Power Dissipation (PD) | 310 W |
| Thermal Resistance Junction‑to‑Case (RθJC) | 0.48 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RθJA) | 62 °C/W |
| Total Gate Charge (Qg) | 92 nC (typ) |
| On‑Resistance (RDS(on)) | 0.0088 Ω (typ at VGS=10 V) |
| Input Capacitance (CISS) | 6600 pF |
| Output Capacitance (COSS) | 1000 pF |
| Reverse Transfer Capacitance (CRSS) | 240 pF |
The device is rated for a maximum drain‑source voltage of 75 V.
It can conduct up to 80 A continuously at 25 °C with a gate voltage of 10 V.
Typical on‑resistance is about 0.0088 Ω at VGS=10 V.
The total gate charge is 92 nC (typical) at a gate voltage of 10 V.