ISOPLUS247TM G D HiPerFETTM Power MOSFETs are IXYS's power MOSFETs with high power dissipation, low drain to tab capacitance, low RDS (on) and fast intrinsic Rectifier. These products are suitable for DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, AC motor control and other fields.
The IXFR 180N10 is an isolated back‑surface power MOSFET featuring a silicon chip on a direct‑copper‑bond substrate, high power density, and low drain‑to‑tab capacitance. Key characteristics include a 100 V drain‑source rating, 165 A continuous current capability, and a 400 W power dissipation at 25 °C.
The datasheet lists maximum ratings, typical electrical characteristics, mechanical dimensions, and recommended applications such as DC‑DC converters, battery chargers, and AC motor control. Advantages highlighted are easy assembly, space savings, and rugged polysilicon gate cell structure.
| Continuous Drain Current (Id) | 165 A |
|---|---|
| Pulsed Drain Current (Id,pulse) | 720 A |
| Power Dissipation (Pd) | 400 W |
| Operating Temperature Range | -55 °C to +150 °C |
| Gate‑Source Voltage (Vgs) | 10 V |
It can handle a pulsed drain current of up to 720 A.
The MOSFET operates from –55 °C up to +150 °C.
The typical gate‑source voltage is 10 V.