This product is a N-channel enhancement mode fast recovery diode, which has the characteristics of fast recovery diode, Unclamped Inductive Switching (UIS) rated, international standard.
The IXFH 16N80P series is a N‑Channel enhancement mode Power MOSFET with fast recovery diode and high avalanche rating. It is offered in TO‑247, TO‑268 and PLUS220 packages and is designed for easy mounting, space savings and high power density.
The datasheet lists maximum ratings, electrical characteristics, thermal parameters and package outlines, together with graphs of output characteristics, transconductance and gate charge. All values are measured at 25 °C unless otherwise noted.
| Maximum Drain‑Source Voltage (V_DSS) | 800 V |
|---|---|
| Package Weight (TO‑247) | 6.0 g |
The device is rated for a maximum drain‑source voltage of 800 V.