IXFK 140N30P is a N-channel enhancement mode power MOSFET produced by IXYS, with a rated voltage of 300V and a maximum current of 140A. The switching time is 200ns.
The IXFK 140N30P is an N‑channel enhancement‑mode power MOSFET from IXYS, featuring a 300 V drain‑source rating, high current capability, and low package inductance. It is offered in the TO‑264 (IXFK) and PLUS247 (IXFX) packages, designed for easy mounting and space‑saving applications.
The datasheet lists maximum ratings such as 300 V V_DSS, 140 A continuous drain current, 300 A pulsed current, and 1040 W power dissipation, along with operating temperature limits from –55 °C to +150 °C. Detailed characteristic curves for output, transconductance, gate charge, and thermal resistance are included to aid designers in selecting and applying the device.
| Drain‑Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current (I_D) | 140 A |
| Pulse Drain Current | 300 A |
| Power Dissipation (P_D) | 1040 W |
| Operating Temperature Range | -55 °C to +150 °C |
The device is rated for a maximum drain‑source voltage of 300 V.
It can continuously conduct up to 140 A of drain current.
The MOSFET can dissipate up to 1040 W at 25 °C.
It operates from –55 °C up to +150 °C.