FGH30N6S2/FGP30N6S2/FGB30N6S2 is a N-channel IGBT from Fairchild Semiconductor Corporation released in August 2003. It has a rated voltage of 600V, low gate charge, low plateau voltage and avalanche capability. It is suitable for high voltage switched mode power supply applications.
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are low‑gate‑charge, low‑plateau‑voltage SMPS II IGBTs designed for high‑voltage switched‑mode power‑supply applications such as PFC, full‑bridge, and UPS circuits. Their fast switching speed and UIS capability reduce gate‑drive power and improve efficiency.
The datasheet provides full electrical specifications, maximum ratings, package information, typical performance curves, and handling precautions. It also includes ordering codes, thermal characteristics, and safety notices required for designers and manufacturers.
| Collector‑to‑Emitter Breakdown Voltage (BVceo) | 600 V |
|---|---|
| Continuous Collector Current (Ic) at 25 °C | 45 A |
| Gate Charge (Qg) | 23 nC @ VEE=15 V |
| Plateau Voltage (VGE) | 6.5 V typical |
| Switching SOA Capability | 600 V, 60 A |
| Total Power Dissipation (Pp) at 25 °C | 167 W |
Keep leads shorted together, ground the handler’s body (e.g., with a wrist strap), ground soldering iron tips, never insert or remove the device with power applied, and protect the gate with an external Zener if needed.
The device can operate at 100 kHz with 390 V and 144 A, and at 200 kHz with 390 V and 9 A.
The gate‑voltage rating must not exceed VEE = 20 V continuous or VEE = 30 V pulsed.