This is a technical document about QFET. It introduces the features and characteristics of QFET.
The FQPF16N15 is a 150 V N‑Channel enhancement mode power MOSFET produced with Fairchild’s planar stripe DMOS technology. It is designed for low‑voltage applications such as audio amplifiers, DC‑DC converters, and motor control.
Key features include a continuous drain current of 11.6 A at 25 °C, low gate charge (typical 23 nC), low output capacitance (typical 30 pF), fast switching, 100 % avalanche tested capability, and a maximum junction temperature of 175 °C. The datasheet provides absolute maximum ratings, thermal characteristics, electrical characteristics, and typical performance curves.
| Drain‑Source Voltage (VDS) | 150 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 11.6 A |
| Pulsed Drain Current (ID) (Note 1) | 46.4 A |
| On‑Resistance (RDS(on)) at VGS=10 V | 0.162 Ω |
| Total Gate Charge (Qg) | 23 nC |
| Input Capacitance (Ciss) | 700‑910 pF |
| Power Dissipation (PD) @ 25 °C | 53 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 2.78 °C·W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C·W |
The maximum continuous drain current at 25 °C is 11.6 A.
The device is rated for a drain‑source voltage of 150 V.
The typical total gate charge is 23 nC.
The maximum power dissipation at 25 °C is 53 W.