The IPI90R340C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, qualification according to JEDEC1) for target applications, Pb-free lead plating compliant with RoHS, and worldwide best RDS,on in TO262 (I2Pak) package. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS. The maximum ratings include continuous drain current, pulsed drain current, avalanche energy for single pulse and repetitive, avalanche current for repetitive, MOSFET dv/dt ruggedness, gate source voltage, power dissipation, and operating and storage temperature.
The IPISOR340C3 is a 900 V CoolMOS power transistor designed for quasi‑resonant flyback, forward topologies, PC power supplies and industrial SMPS. It offers a low figure‑of‑merit Ron·Qy, ultra‑low gate charge, high peak current capability and JEDEC qualification.
The document provides detailed electrical, thermal and mechanical specifications, including maximum ratings, static and dynamic characteristics, gate‑charge curves, avalanche energy data and package dimensions for the TO‑262 (PG‑TO262) case.
| Continuous drain current (Id) @ 25 °C | 15 A |
|---|---|
| On‑state resistance (Rds(on)) typical | 0.34 Ω |
| Maximum power dissipation (Pd) @ 25 °C | 208 W |
The device can handle up to 15 A of continuous drain current at 25 °C.
Typical Rds(on) is 0.34 Ω at a gate voltage of 10 V and 25 °C.
The transistor can dissipate up to 208 W at 25 °C.