This document describes the features and characteristics of the BSP 300 SIPMOS® small-signal transistor, released in 2005. It includes N channel, enhancement mode, avalanche rating, VGS(th) of 2.0-4.0V, etc. The document also provides maximum ratings, thermal resistance, and static characteristics.
This datasheet describes the Infineon BSP300 small‑signal N‑channel MOSFET, including its maximum ratings such as continuous drain current, pulsed drain current, and avalanche energy. Package details (PG‑SOT‑223) and compliance information (RoHS, Pb‑free) are also listed.
Key electrical characteristics are presented, covering static parameters like drain‑source breakdown voltage and gate threshold voltage, as well as dynamic parameters such as input/output capacitances, transconductance, and switching times. Thermal resistance and power dissipation limits are provided for design reference.
| Package | PG‑SOT‑223 |
|---|---|
| Power dissipation at 25 °C (Pd) | 1.8 W |
| Avalanche rating voltage | 2.0–4.0 V |
The device is supplied in a PG‑SOT‑223 package.