BUP 313D IGBT is an IGBT with an integrated diode, with low forward voltage drop, high switching speed, low tail current, latch-up free and high reliability.
The BUP313D is a 1200 V, 32 A IGBT with an integrated fast free‑wheel diode. The datasheet lists its maximum ratings, including collector‑emitter voltage, collector current, and power dissipation, as well as thermal limits and environmental categories.
Detailed electrical characteristics are given for static, AC and switching behavior, covering gate threshold voltage, saturation voltage, capacitances, and typical switching times for inductive loads. Safe operating area graphs and typical output characteristics are also included.
| Collector‑emitter voltage (VCE) | 1200 V |
|---|---|
| Collector current (IC) | 32 A |
| Gate threshold voltage (VGE(th)) | 4.5–6.5 V |
| Collector‑emitter saturation voltage (VCE(sat)) | 3.2 V (typ) |
| Power dissipation (P_D) | 200 W @ 25 °C |
| Thermal resistance, chip‑case | < 0.63 K/W |
The maximum collector‑emitter voltage is 1200 V.
The device can handle up to 32 A of continuous collector current.
The gate threshold voltage ranges from 4.5 V to 6.5 V.