BSS670S2L is a N-channel enhancement mode logic level MOSFET produced by ON Semiconductor. Its maximum voltage is 55V, the minimum on-resistance is 650mΩ, and the maximum current is 0.54A.
The BSS670S2L is an N‑channel enhancement‑mode MOSFET offered in a SOT‑23 package. The product summary lists key features such as a low on‑state resistance, logic‑level gate drive, and a maximum drain current of 0.54 A at 25 °C. Electrical and thermal characteristics are detailed, including continuous and pulsed drain currents, power dissipation, and temperature limits.
Further sections describe dynamic parameters such as transconductance, capacitances, gate charge, and reverse‑diode behavior, as well as safe operating area curves. The document ends with publishing and warranty notices from Infineon Technologies AG.
| Continuous drain current (Id) @ 25 °C | 0.54 A |
|---|---|
| Pulsed drain current (Id,pulse) | 2.2 A |
| Gate‑source voltage (Vgs) rating | +20 V |
| Power dissipation (Pd) @ 25 °C | 0.36 W |
| Operating temperature range | -55 °C to +150 °C |
| Typical on‑state resistance (Rds(on)) | 0.43 mΩ |
The maximum continuous drain current is 0.54 A at 25 °C.
The device can dissipate up to 0.36 W at 25 °C.
It operates from –55 °C up to +150 °C.
The gate‑source voltage is rated up to +20 V.