Infineon BSC042N03S OptiMOS Power Transistor Datasheet

The BSC042N03S OptiMOS®2 power transistor has fast switching, excellent current conduction, low on-resistance, excellent thermal resistance, and good dv/dt characteristics, which are suitable for notebook DC/DC converters and other applications.


Infineon BSC042N03S OptiMOS Power Transistor Datasheet - cover page
Brand
Infineon
Category
power switch
Document type
Datasheet
Language
English
Pages
11
File format
PDF
File size
277 KB
Published
06 April, 2012
Updated
30 September, 2023
MD5 checksum
98B18D5A9A6054F5FC125DEA755DAEC2

About this manual

The BSC042N03S is an N‑channel, logic‑level OptiMOS power transistor designed for high‑efficiency SMPS and notebook DC/DC converters. It offers low on‑resistance, fast switching, and robust avalanche and dv/dt ratings.

The datasheet details maximum ratings, thermal characteristics, dynamic switching parameters, safe operating area, and mechanical dimensions for the P‑TDSON‑8 package, along with legal and warranty notices.

What's inside

  • Product Summary
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Dynamic Characteristics
  • Safe Operating Area
  • Package Outline
  • Legal Disclaimer

Specifications

Continuous drain current (I_D) at 25 °C50 A
Power dissipation (P_D) at 25 °C62.5 W
Package typeP‑TDSON‑8

Frequently asked questions

What is the maximum continuous drain current at 25 °C?

The device can handle up to 50 A of continuous drain current at 25 °C.

Which package does the BSC042N03S use?

It is supplied in a P‑TDSON‑8 surface‑mount package.

What is the maximum power dissipation rating?

The transistor can dissipate up to 62.5 W at a case temperature of 25 °C.

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