Infineon IPD50R399CP Power Transistor Datasheet

IPD50R399CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, and RoHS compliance. It is designed for hard and softswitching SMPS topologies, DCM PFC for lamp ballast, and PWM for lamp ballast and PDP/LCD TVs.


Infineon IPD50R399CP Power Transistor Datasheet - cover page
Brand
Infineon
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
350 KB
Published
06 April, 2012
Updated
28 September, 2023
MD5 checksum
5AE9840AAB59A5509E45AD4B6E154A78

About this manual

The IPD50R399CP is a CoolMOS™ power transistor designed for hard and soft‑switching SMPS topologies, lamp ballast, PWM, and LCD TV applications. It features ultra‑low gate charge, high peak current capability, and RoHS‑compliant, lead‑free packaging.

The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, and typical output characteristics, enabling designers to assess suitability for high‑frequency, high‑power designs.

What's inside

  • Product Summary
  • Maximum ratings
  • Thermal characteristics
  • Electrical characteristics
  • Static characteristics
  • Dynamic characteristics
  • Typical output characteristics
  • Typical gate charge
  • Typical capacitances
  • Legal Disclaimer

Specifications

Continuous drain current (Id)9 A
Pulsed drain current (Ipp)20 A

Frequently asked questions

What is the continuous drain current rating of the IPD50R399CP?

The continuous drain current is 9 A at 25 °C.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 20 A at 25 °C.

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