IKA03N120H2 is a power semiconductor device produced by Infineon. This device uses the second-generation HighSpeed technology and has a soft recovery, fast recovery anti-parallel EmCon HE diode. It is suitable for television horizontal line deflection.
The IKAQ3N120H2 is a high‑speed IGBT designed for TV horizontal line deflection and other 1200 V applications. It features low loss, temperature‑stable behavior, parallel switching capability, and an integrated anti‑parallel diode.
The document provides maximum ratings, thermal characteristics, electrical and switching parameters, and typical performance graphs. It also includes safety and compliance notices from Infineon Technologies AG.
| Collector‑emitter voltage (VCE) max | 1200 V |
|---|---|
| Power dissipation at 25 °C | 29 W |
| Junction‑to‑case thermal resistance (RthJC) | 43 K/W |
| Diode forward voltage (VF) at 25 °C, 3 A | 1.55 V |
| Gate‑emitter voltage (VGE) max | +20 V |
| Isolation voltage | 2500 V |
| Operating temperature range | -40 °C to +150 °C |
The device is rated for a maximum collector‑emitter voltage of 1200 V.
It can dissipate up to 29 W at a case temperature of 25 °C.
The junction‑to‑case thermal resistance is 43 K/W.
The IKAQ3N120H2 operates from –40 °C up to +150 °C.