BDP947, BDP949 are two silicon NPN transistors with high collector current, high current gain and low collector-emitter saturation voltage.
This datasheet provides the key specifications for the BDP947 and BDP949 NPN transistors, including maximum voltage and current ratings, thermal characteristics, and AC performance. It also lists the SOT223 package dimensions and marking details.
The document includes electrical characteristic tables, graphs of gain versus current, and permissible pulse load curves, as well as legal notices and safety warnings from Infineon Technologies AG. This manual is written in Chinese.
| Collector‑emitter voltage (VCEO) | 45 V (BDP947) / 60 V (BDP949) |
|---|---|
| Maximum collector current (IC) | 3 A |
| Junction temperature (Tj) | 150 °C |
The BDP947 transistor has a maximum collector‑emitter voltage of 45 V.
Both transistors are supplied in an SOT223 surface‑mount package.