IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode produced by IDT company. It features benchmark switching behavior, no reverse recovery/no forward recovery, no temperature influence on switching behavior, high surge current capability and so on.
The IDT16S60C is a 2nd‑generation thinQ!™ SiC Schottky diode featuring no reverse or forward recovery, temperature‑independent switching, and high surge current capability. It is intended for fast‑switching applications such as CCM PFC and motor drives.
The document lists maximum ratings, thermal characteristics, electrical parameters, and package details, including continuous forward current of 16 A, reverse voltage rating of 600 V, forward voltage around 1.5 V at 25 °C, and a power dissipation rating of 136 W. Mechanical dimensions for the PG‑TO220‑2‑2 package are also provided.
| Repetitive peak reverse voltage (VRRM) | 600 V |
|---|---|
| Junction‑to‑case thermal resistance (RthJC) | 1.1 K/W |
It is rated for a repetitive peak reverse voltage of 600 V.