IKP04N60T is a power semiconductor product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low VCE(sat), high reliability and high switching speed.
The IKP04N60T is a 600 V, 4 A IGBT in Infineon's TrenchStop® and Fieldstop technology, featuring very low VCE(sat), low gate charge and fast recovery anti‑parallel diode. It is RoHS‑compliant, Pb‑free and qualified for frequency converters and drives.
Typical applications include industrial drives, inverters and power conversion systems where high switching speed, low losses and ruggedness are required. The datasheet includes maximum ratings, thermal resistance values, switching characteristics and detailed graphs for design reference.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Saturation voltage (VCE(sat), typ.) | 1.5 V |
| Maximum junction temperature (Tj,max) | 175 °C |
| Short‑circuit withstand time (tSC) | 5 µs |
| Thermal resistance, junction‑to‑case (RthJC) | 3.5 K/W |
The device is rated for a maximum collector‑emitter voltage of 600 V.
At 4 A and 25 °C the typical VCE(sat) is 1.5 V.
It can endure a short‑circuit condition for up to 5 µs.
The junction‑to‑case thermal resistance (RthJC) is 3.5 K/W.