The SDP04S60, SDD04S60 SDT04S60 is the world's first 600V Schottky diode, with industry-leading switching characteristics, no reverse recovery, no temperature dependence, fast switching speed, and is ideal for power factor correction applications.
This datasheet provides the electrical, thermal and mechanical specifications of Infineon's silicon‑carbide Schottky diodes SDP04S60, SDD04S60 and SDT04S60. It includes maximum ratings, forward voltage characteristics, reverse current data, and package dimensions for the TO‑220 and TO‑252 families.
The document also contains legal notices, contact information for Infineon Technologies AG, and a disclaimer that the data are provided for reference only and are not guaranteed. It is intended for designers and engineers selecting high‑performance diodes for power‑factor correction and other high‑voltage applications.
| Continuous forward current (Ir) | 4 A |
|---|---|
| RMS forward current | 5.6 A |
| Surge non‑repetitive forward current | 12.5 A |
| Repetitive peak forward current | 18 A |
| Non‑repetitive peak forward current | 40 A |
| Repetitive peak reverse voltage | 600 V |
| Surge peak reverse voltage | 600 V |
| Power dissipation (at 25 °C) | 36.5 W |
| Operating temperature range | -55 °C to +175 °C |
| Forward voltage (4 A, 25 °C) | 1.7 V typical, 1.9 V max |
| Reverse current (600 V, 25 °C) | 15 µA typical, 200 µA max |
The diode can continuously conduct up to 4 A forward current.
The device is rated for a repetitive peak reverse voltage of 600 V.
It can dissipate up to 36.5 W when mounted on a 25 °C heat sink.
The diode operates from –55 °C up to +175 °C.