The SPU01N60C3 SPD01N60C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.
The SPU01N60C3 is a Cool MOS power transistor featuring a 650 V drain‑source voltage, ultra‑low gate charge, and low effective capacitances. It is RoHS compliant and qualified according to JEDEC for target applications. The document lists package options (PG‑TO251, PG‑TO252) and mechanical dimensions.
Detailed electrical characteristics include maximum ratings, thermal resistance values, on‑state resistance, capacitances, gate‑charge parameters, and avalanche energy. Thermal characteristics and transient impedance curves are provided to aid in thermal design and safe operating area calculations.
| Continuous Drain Current (ID) at 25 °C | 0.8 A |
|---|---|
| Pulsed Drain Current (ID,pulse) | 1.6 A |
| Avalanche Energy (single pulse) | 20 mJ |
| Power Dissipation (PD) at 25 °C | 11 W |
| Reverse Recovery Time (trr) | 570 ns |
The maximum continuous drain current is 0.8 A at 25 °C.
A single pulse avalanche energy is specified as 20 mJ.