This document describes the features and characteristics of the SGP10N60A, SGB10N60A, and SGW10N60A fast IGBT products. These products utilize NPT technology and offer 75% lower Eoff and low conduction losses compared to previous generations. They are designed for motor controls and inverter applications. The NPT technology provides very tight parameter distribution, high ruggedness, temperature stable behavior, and parallel switching capability. Complete product spectrum and PSpice models can be found on the Infineon website.
The Infineon SGP10N60A, SGB10N60A, and SGW10N60A are fast IGBT devices built with NPT‑technology for 600 V applications. They are optimized for motor‑control and inverter use, offering tight parameter distribution and high temperature stability.
The datasheet provides maximum ratings, thermal resistance values, static and dynamic electrical characteristics, and detailed switching performance such as turn‑on/off delay times, energy losses, and transient thermal impedance. Graphs illustrate collector current versus switching frequency, power dissipation versus case temperature, and typical transfer characteristics.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Maximum DC collector current (IC) | 10 A |
| Power dissipation (P_R) at 25 °C | 92 W |
The maximum collector‑emitter voltage is 600 V.
It can dissipate up to 92 W at a case temperature of 25 °C.