BSP296 is a N-channel enhancement mode logic level power MOSFET from Infineon Technologies. It has a maximum continuous drain current of 1.1A, a maximum on-resistance of 0.7Ω, a maximum reverse diode dv/dt of 6kV/µs, and a maximum power dissipation of 1.79W. The device is available in a PG-SOT-223 package and is rated for operation in temperatures ranging from -55°C to +150°C.
The BSP296 is an N‑channel, enhancement‑mode, small‑signal MOSFET offered in a P‑SOT‑223 (PG‑SOT‑223) package. The document lists its key electrical parameters, thermal characteristics and recommended operating conditions for designers.
Typical values include a continuous drain current of 11 A at 25 °C, a pulsed drain current of 4.4 A, a drain‑source breakdown voltage of 100 V, and a power dissipation of 1.79 W. The device operates from –55 °C to +150 °C and features low on‑resistance and fast switching characteristics.
| Continuous drain current (Id) | 11 A (typ) at 25 °C |
|---|---|
| Pulsed drain current (Id,puls) | 4.4 A (typ) at 25 °C |
| Gate‑source voltage (Vgs) | +20 V |
| Power dissipation (Pd) | 1.79 W at 25 °C |
The BSP296 can handle a continuous drain current of 11 A at 25 °C.