IPP90R800C3 CoolMOS™ Power Transistor is a power transistor launched by Infineon. The product has the lowest RON x Qg, extreme dv/dt, high peak current capability and other features. It is suitable for various switch power supply applications.
The IPP90R800C3 is a 900 V CoolMOS™ power transistor from Infineon, designed for quasi‑resonant flyback/forward topologies, PC power supplies, consumer and industrial SMPS applications. It features low on‑state resistance, high peak current capability, ultra‑low gate charge, and is RoHS compliant.
The document lists maximum ratings such as a continuous drain current of 6.9 A, pulsed drain current of 15 A, and a power dissipation of 104 W at 25 °C. Detailed electrical, thermal, and dynamic characteristics are provided, including gate threshold voltage, input/output capacitances, and avalanche energy specifications. Package dimensions for the PG‑TO220 case are also included.
| Continuous drain current (Id) | 6.9 A |
|---|---|
| Pulsed drain current (Id,pulse) | 15 A |
| Maximum power dissipation (Pd) | 104 W |
| Operating temperature range | -55 °C to 150 °C |
| Package type | PG‑TO220 |
| Gate threshold voltage (Vgs(th)) | 2.5 V to 3.5 V |
| Total gate charge (Qg) | 42 nC |
| Input capacitance (Ciss) | 1100 pF (typ) |
The continuous drain current is rated at 6.9 A at 25 °C.
The device can dissipate up to 104 W at 25 °C.
It is supplied in a PG‑TO220 package.