The IKP10N60T is a low-loss IGBT that uses TrenchStop® and Fieldstop technology with soft, fast-recovery anti-parallel EmCon HE diode. IKP10N60T features very low Vce(sat) of 1.5 V; maximum junction temperature of 175 °C; short circuit withstand time of 5µs. It is designed for applications such as variable speed drive for washing machines, air conditioners and induction cooking, as well as uninterruptible power supply.
The Infineon IKP10N60T is a 600 V, 10 A TrenchStop® series IGBT with low loss and fast recovery anti‑parallel diode, designed for variable speed drives, UPS, and other power applications. The datasheet provides electrical, thermal, and switching characteristics, along with maximum ratings and typical performance curves.
Key features include a very low forward voltage (typ. 1.5 V), high ruggedness, low gate charge, and compliance with RoHS and JEDEC standards. Detailed graphs illustrate output characteristics, switching times, energy losses, and thermal behavior across a range of temperatures and currents.
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| Maximum continuous collector current (IC) | 20 A @ 25 °C |
| Gate‑emitter voltage rating (VGE) | +20 V |
| Maximum power dissipation (PD) | 110 W @ 25 °C |
| Maximum junction temperature (Tj max) | 175 °C |
| Thermal resistance, junction‑to‑case (RθJC) | 1.35 K/W |
| Diode forward voltage (VF) | 1.5 V typ. |
| Short‑circuit withstand time (tSC) | 5 µs |
The device is rated for a maximum collector‑emitter voltage of 600 V.
It can carry up to 20 A of continuous collector current at 25 °C.
The IGBT can operate up to a junction temperature of 175 °C.
The gate‑emitter voltage rating is +20 V.